Multi-wavelength Raman characterization of back-gated monolayer and bilayer graphene

摘要

In this work, we investigate the Raman spectrum of gated monolayer and bilayergraphene devices. We used Raman spectroscopy with three different excitationwavelengths: (488nm, 514nm and 633nm).For monolayer devices we observedthe expected behavior for doped devices. For bilayer devices, we present acomparison between the theoretical model and our experimental results.